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2 X 5A Schottky Rectifier Thermistor Diode 10CTQ150SPBF 10CTQ150PBF

Wuxi Xuyang Electronics Co., Ltd.
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2 X 5A Schottky Rectifier Thermistor Diode 10CTQ150SPBF 10CTQ150PBF

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Brand Name : XUYANG

Model Number : 10CTQ150SPBF 10CTQ150PBF

Certification : ISO9001/RoHS

Place of Origin : China

MOQ : 1000PCS

Price : negotiation

Payment Terms : T/T, Western Union

Supply Ability : 100000pcs per 1 week

Delivery Time : 15 - 20 work days

Packaging Details : bulk in bar

Name : Schottky Diode

Part number : 10CTQ150SPBF 10CTQ150PBF

IF : 2 x 5A

Voltage : 150V

Package : D2PAK / TO-262

Junction Temperature : -55-175°C

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10A Schottky Rectifier Diode 10CTQ150SPBF 10CTQ150PBF MOSFET Field Effect Transistor

FEATURES

• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and

moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level

MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 10 A
VRRM 150 V
IFSM tp = 5 μs sine 620 A
VF 5 Apk, TJ = 125 °C (per leg) 0.73 V
TJ Range - 55 to 175 °C

ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average per leg

forward current per device

IF(AV) 50 % duty cycle at TC = 155 °C, rectangular waveform 5 A
10
Maximum peak one cycle non-repetitive surge current per leg IFSM 5 μs sine or 3 μs rect. pulse

Following any rated load

condition and with rated

VRRM applied

620 A
10 ms sine or 6 ms rect. pulse 115
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1 A, L = 10 mH 5 mJ
Repetitive avalanche current per leg IAR

Current decaying linearly to zero in 1 μs

Frequency limited by TJ maximum VA = 1.5 x VR typical

1 A

ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg VFM(1) 5 A TJ = 25 °C 0.93 V
10 A 1.10
5 A TJ = 125 °C 0.73
10 A 0.86
Maximum reverse leakage current per leg IRM(1) TJ = 25 °C VR = Rated VR 0.05 mA
TJ = 125 °C 7
Threshold voltage VF(TO) TJ = TJ maximum 0.468 V
Forward slope resistance rt 28
Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 200 pF
Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR 10 000 V/μs

PARAMETER SYMBOL TEST CONDITIONS VALUES
Maximum junction and storage temperature range TJ, TStg - 55 to 175

Maximum thermal resistance,

junction to case per leg

RthJC DC operation 3.50

Maximum thermal resistance,

junction to case per package

1.75

Typical thermal resistance,

case to heatsink (only for TO-220)

RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2
Approximate weight 0.07
Mounting torque minimum 6 (5)
maximum 12 (10)
Marking device Case style D2PAK 10CTQ150S
Case style TO-262 10CTQ150-1

Size:

2 X 5A Schottky Rectifier Thermistor Diode 10CTQ150SPBF 10CTQ150PBF

2 X 5A Schottky Rectifier Thermistor Diode 10CTQ150SPBF 10CTQ150PBF

What can you from XUYANG?

Best service: with 10 years experience in exporting sales staff will service you.

High quality: help you to avoid purchasing risk.

Short delivery: help you to save time.

Competitive price: the price is not the lowest but the highest cost performance

OEM/ODM: we are confident we can meet you OEM/ODm requirements.


Product Tags:

silicon rectifier diode

      

silicon zener diode

      
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