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0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case

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Wuxi Xuyang Electronics Co., Ltd.

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Name: 015A 75V 40nS High Speed Switching Diode 1N4148 With DO35 Glass Case
Brand: XUYANG
Price: 1 USD

Brand Name : XUYANG

Model Number : 1N4148

Certification : ISO9001

Place of Origin : China

MOQ : 5000pcs

Price : negotiation

Payment Terms : T/T, Western Union

Supply Ability : 100000pcs per 1 week

Delivery Time : 5 - 8 work days

Packaging Details : tape in box, 5000pcs/box

Name : Switching diode

Part number : 1N4148

VR : 75V

Package : DO-35

Lead Free Status : Lead free/RoHS

Shipping by : DHL\UPS\Fedex\EMS\sea

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0.15A 75V 4.0nS DO-35 Package High Speed Switching Diode 1N4148

Features

• Silicon Epitaxial Planar Diode

• Fast switching diode.

• This diode is also available in other case styles including the SOD-123 case with the type

designation 1N4148W, the MiniMELF case with the type designation LL4148, the SOT-23

case with the type designation IMBD4148.

Mechanical Data

Case: DO-35 Glass Case

Weight: approx. 0.13g

Drawing:

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

Parameter	Symbol	Limit	Unit
Reverse Voltage	VR	75	V
Peak Reverse Voltage	VRM	100	V
Average Rectified Current Half Wave Rectification with Resistive Load at Tamb = 25°C	IF(AV)	150	mA
Surge Forward Current at t < 1s and Tj = 25°C	IFSM	500	mA
Power Dissipation at Tamb = 25°C	Ptot	500	mW
Thermal Resistance Junction to Ambient Air	RθJA	350	°C/W
Junction Temperature	Tj	175	°C
Storage Temperature	TS	–65 to +175	°C

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Reverse Breakdown Voltage	V(BR)R	IR = 100μA	100			V
Forward Voltage	VF	IF = 10mA	—	—	1.0	V
Leakage Current	IR	VR = 20V VR = 75V VR = 20V, TJ = 150°C	—	—	25 5 50	nA μA μA
Capacitance	Ctot	VF = VR = 0V	—	—	4	pF
Voltage Rise when Switching ON (tested with 50mA Pulses)	Vfr	tp = 0.1μs, Rise time < 30ns fp = 5 to 100kHz	—	—	2.5	ns
Reverse Recovery Time	trr	IF = 10mA, IR = 1mA, VR = 6V , RL = 100Ω	—	—	4	ns
Rectification Efficiency	nv	f = 100MHz, VRF = 2V	0.45	—	—	—

Product Tags:

ultra fast switching diode

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